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Experimental content

A 808nm semiconductor laser characteristics measurement

808nm semiconductor laser electro-optical properties: the drawing of electro-optical curve, determine the threshold current and gain slope.

2 (Optional) measurement of semiconductor laser spectroscopy with the temperature dependence of: changing the temperature of the laser spectrometer to measure the changes in the output laser wavelength

 

Two LD end-pumped YAG laser

A pattern matching techniques: observation of the relationship between the pump laser spot with the 1064nm laser output power.

Wavelength matched: the 808nm laser wavelength to observe the change of the 1064nm laser output power.

3 YAG laser input - output efficiency curve: the 808nm laser output power, measurement of the 1064nm laser output power, and draw the input - output power curve, and determine the threshold power.

 

Third, the frequency doubling technology

(1) the observation of the laser transverse mode.

532nm laser output power and pump power.

3 matching angle. KTP crystal into the YAG cavity, rotating the KTP crystal, to observe the changes of the 532nm laser power, to find the best match the angle of the KTP crystal.

Optional content

A Q-

Q-materials into the YAG cavity, 1064nm laser pulse waveform by the oscilloscope. The 808nm semiconductor laser power, and observe the changes of the Q-switched pulse width and frequency.

Second, the fluorescence lifetime

   Change the 808nm semiconductor laser power measurement of the fluorescence lifetime of the Q-material.

Technical indicators

Optical experiments rail 800mm.

The temperature control semiconductor laser 808nm, 2W semiconductor refrigeration.

YAG crystal +4 degrees of freedom to adjust frame, the angle of two-dimensional and linear two-dimensional

KTP crystals +5 degrees of freedom adjustment, 360-degree adjustable minimum scale of 1 degree.

Two-dimensional adjustable quasi diameter lasers, 650nm, 4mW.